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IPD10N03LA

Part No IPD10N03LA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 30A DPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 11nC @ 5V
Max Input Capacitance 1358pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 52W (Tc)
Maximum Rds On at Id,Vgs 10.4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 117860-IPD10N03LA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD10N03LA CAD Model

Description

The Infineon Technologies IPD10N03LA is a high-performance N-channel MOSFET ideal for use in a variety of applications such as power supplies, motor control, and lighting systems.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 30A @ 25°C
  • Maximum Rds On: 10.4 mOhm @ Id,Vgs of 30A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2V @ 20μA
  • Package: PG-TO252-3
  • Mounting: SMD (SMT) technology
  • Power Dissipation: 52W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand: Currently in balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6255 $59.4225
230+ $0.5133 $118.0590
350+ $0.4973 $174.0550
480+ $0.4813 $231.0240
625+ $0.4652 $290.7500
835+ $0.4171 $348.2785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 389 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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