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IRF8707TRPBF Real Image IRF8707TRPBF Real Image
Same model may have multiple batches, images only for reference.
IRF8707TRPBF Real Image IRF8707TRPBF Real Image
IRF8707TRPBF Real Image IRF8707TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF8707TRPBF

Part No IRF8707TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC
Datasheet
IRF8707TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 9.3nC @ 4.5V
Max Input Capacitance 760pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 11.9 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 017549-IRF8707TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IRF8707
Introduction Date October 24, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRF8707TRPBF CAD Model

Description

The Infineon Technologies IRF8707TRPBF is an N-channel MOSFET with a drain-source breakdown voltage of 30V and continuous drain current of 11A at 25°C.

  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Maximum Rds On at Id,Vgs: 11.9 mOhm @ 11A, 10V
  • Maximum Gate Charge: 9.3nC @ 4.5V
  • Case/Package: 8-SO

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115+ $0.8836 $101.6140
180+ $0.8538 $153.6840
255+ $0.7941 $202.4955
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410+ $0.7344 $301.1040
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