The Infineon Technologies IRFL1006PBF is a N-Channel MOSFET transistor with a maximum power dissipation of 1W (Ta).

• Package: SOT-223
• Drive Voltage: 10V
• Mounting: surface-mount device
• Drain-Source Breakdown Voltage: 60V
• Continuous Drain Current: 1.6A @ 25°C
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Gate Charge: 8nC @ 10V
• Maximum Input Capacitance: 160pF @ 25V
• Maximum Rds On at Id,Vgs: 220 mOhm @ 1.6A, 10V
• Temperature Range: -55°C to 150°C (TJ)
• Dimension: TO-261-4, TO-261AA
• Supply and Demand Status: balanced
• Pieces per Package: 80