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Same model may have multiple batches, images only for reference.
IRFR9120NPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR9120NPBF

Part No IRFR9120NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 6.6A DPAK
Datasheet
IRFR9120NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 480 mOhm @ 3.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 016472-IRFR9120NPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR9120NPBF CAD Model

Description

The Infineon Technologies IRFR9120NPBF is a P-Channel MOSFET with a Drain-Source Breakdown Voltage of 100V and a Continuous Drain Current of 6.6A (Tc).

  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Max Rds On @ Id,Vgs: 480 mOhm @ 3.9A, 10V
  • Power Dissipation (Max): 40W (Tc)
  • Package: D-Pak
  • Technology: SMD (SMT)
  • Popularity: popular in the Discrete Semiconductor Products category

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.1887 $50.0055
570+ $0.1768 $100.7760
880+ $0.1708 $150.3040
1,260+ $0.1589 $200.2140
1,640+ $0.1529 $250.7560
2,045+ $0.1469 $300.4105
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 56,370 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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