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Same model may have multiple batches, images only for reference.
IRFU12N25D Real Image
Same model may have multiple batches, images only for reference.

IRFU12N25D

Part No IRFU12N25D
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 14A I-PAK / Trans MOSFET N-CH 250V 14A Automotive 3-Pin(3+Tab) IPAK
Datasheet
IRFU12N25D Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 250V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 810pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 144W (Tc)
Rds On (Maximum) @ Id, Vgs 260 mOhm @ 8.4A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package IPAK (TO-251)
Package TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 777080-IRFU12N25D
Popularity Medium
Supply and Demand Status Limited
Quantity per package 75
Family Name IRFU12N25
Introduction Date September 21, 2001
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRFU12N25D CAD Model

Description

The Infineon Technologies MOSFET, IRFU12N25D, is a through-hole mounting style electronic component that operates in the -55°C to 175°C temperature range.

  • Temperature Range: -55°C to 175°C
  • Current Continuous Drain: 14A (Tc) @ 25°C
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Technology: HEXFET
  • Voltage Gate-Source Threshold: 5V @ 250μA
  • Gate Charge: 35nC @ 10V
  • Drain-Source Voltage: 250V
  • Maximum Power Dissipation: 144W (Tc)
  • Input Capacitance: 810pF @ 25V
  • Rds On: 260 mOhm @ 8.4A, 10V

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