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IRLR8113

Part No IRLR8113
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 94A DPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 32nC @ 4.5V
Max Input Capacitance 2920pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 89W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 020164-IRLR8113
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRLR8113 CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel power transistor that is suitable for use in a variety of applications, including power supplies, motor control, and lighting.

  • Maximum Power Dissipation: 89W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 94A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Gate Charge: 32nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 6 mOhm @ 15A, 10V
  • Package: D-Pak case
  • Mounting: Surface-mounting
  • Temperature Range: -55°C to 175°C (TJ)
  • Status: Obsolete (EOL) component

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,620 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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