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SMBT3906UE6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

SMBT3906UE6327HTSA1

Part No SMBT3906UE6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Arrays
Datasheet
SMBT3906UE6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Mfr Infineon Technologies
Package Tape & Reel (TR)
Product Status Not For New Designs
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power - Max 330mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case SC-74, SOT-457
Supplier Device Package PG-SC74-6
Base Product Number SMBT 3906
Other Names INFINFSMBT3906UE6327HTSA1,2156-SMBT3906UE6327HTSA1-ITTR,SMBT 3906U E6327,SMBT 3906U E6327,SP000012616,SMBT3906UE6327HTSA1TR,SMBT3906UE6327XT
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1278727-SMBT3906UE6327HTSA1
Ultra Librarian 3D Model Ultra Librarian SMBT3906UE6327HTSA1 CAD Model

Description

The Infineon Technologies SMBT3906UE6327HTSA1 is a dual PNP bipolar junction transistor array.

  • Maximum Power: 330mW
  • Maximum Voltage: 40V
  • Maximum Collector Current: 200mA
  • Transistor Type: 2 PNP
  • DC Current Gain (hFE): 100 @ 10mA, 1V
  • Package/Case: SC-74, SOT-457
  • Supplier Device Package: PG-SC74-6
  • Operating Temperature Range: 150°C (TJ)
  • Ideal for: Discrete semiconductor products such as transistors, bipolar (BJT) arrays

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