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IXTH90N15T

Part No IXTH90N15T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 90A TO247
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 4100pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 455W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049840-IXTH90N15T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH90N15T CAD Model

Description

The IXYS IXTH90N15T is an N-channel MOSFET that comes in a TO-247 package.

  • Maximum Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 90A @ 25°C
  • Power Dissipation: 455W (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 1mA
  • Maximum Gate Charge: 80nC @ 10V
  • Maximum Rds On: 20 mOhm @ 45A, 10V
  • Package: TO-247

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