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Same model may have multiple batches, images only for reference.
SIHB22N60S-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHB22N60S-E3

Part No SIHB22N60S-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description S Series Power MOSFET
Datasheet
SIHB22N60S-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2810pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 250W (Tc)
Rds On (Maximum) @ Id, Vgs 190 mOhm @ 11A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package TO-263 (D2Pak)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1249757-SIHB22N60S-E3
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Family Name SiHB22N60S
Introduction Date December 08, 2009
ECCN EAR99
Country of Origin China
Halogen Free Unknown
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SIHB22N60S-E3 CAD Model

Description

The Vishay 1249757-SIHB22N60S-E3 is a MOSFET transistor that is designed for high-temperature applications.

  • Operating Temperature: -55°C to 150°C
  • Continuous Drain Current: 22A (Tc)
  • Package Type: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting Type: SMD
  • Technology: MOSFET
  • Family Name: SiHB22N60S
  • Category: Discrete Semiconductor Products
  • Gate Charge (Qg): 110nC @ 10V
  • Input Capacitance (Ciss): 2810pF @ 25V
  • Manufacturer Homepage: www.vishay.com
  • Manufacturer Package: TO-263 (D2Pak)
  • Supply and Demand Status: Limited

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