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JANTXV2N6790

Part No JANTXV2N6790
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.5A TO205AF  /  N-Channel 200 V 3.5A (Tc) 800mW (Tc) Through Hole TO-205AF (TO-39)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Microsemi Corporation
Series Military, MIL-PRF-19500/555
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.3 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 800mW (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-205AF (TO-39)
Package / Case TO-205AF Metal Can
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 150-JANTXV2N6790,JANTXV2N6790-MIL,JANTXV2N6790-ND
Standard Package 1
Win Source Part Number 1219421-JANTXV2N6790
Ultra Librarian 3D Model Ultra Librarian JANTXV2N6790 CAD Model

Description

The 1219421-JANTXV2N6790 is a military-grade N-Channel MOSFET transistor with a drain to source voltage of 200 V manufactured by Microsemi Corporation.

  • Drain to Source Voltage: 200 V
  • Continuous Drain Current: 3.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
  • Packaging: Bulk
  • Package / Case: TO-205AF Metal Can
  • MSL Level: 1 (Unlimited)
  • HTSUS: 8541.21.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $84.2106 $84.2106
2+ $81.5790 $163.1580
3+ $78.9474 $236.8422
4+ $76.3158 $305.2632
5+ $68.4211 $342.1055
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Availability: 20 pieces
Order Increment : 1 pcs
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