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Same model may have multiple batches, images only for reference.
PSMN050-80BS,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN050-80BS,118

Part No PSMN050-80BS,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 22A D2PAK
Datasheet
PSMN050-80BS,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 633pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 46 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1090355-PSMN050-80BS,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN050-80BS,118 CAD Model

Description

The PSMN050-80BS,118 is an N-channel MOSFET from Nexperia USA Inc.

  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current @ 25°C: 22A (Tc)
  • Maximum Rds On @ Id, Vgs: 46 mOhm @ 10A, 10V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 11nC @ 10V
  • Maximum Input Capacitance: 633pF @ 12V
  • Mounting: SMD (SMT)
  • Package: D2PAK
  • Category: discrete semiconductor products

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