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PSMN4R3-30PL,127

Part No PSMN4R3-30PL,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.15V @ 1mA
Max Gate Charge 41.5nC @ 10V
Max Input Capacitance 2400pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 103W (Tc)
Maximum Rds On at Id,Vgs 4.3 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1090418-PSMN4R3-30PL,127
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PSMN4R3-30PL,127 CAD Model

Description

The Nexperia PSMN4R3-30PL,127 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 100A (Tc).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 100A (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 4.3 mOhm @ 15A, 10V
  • Package: TO-220AB
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Power Dissipation: 103W (Tc)
  • Maximum Gate Charge: 41.5nC @ 10V
  • Ideal Use: discrete semiconductor products
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.4620 $62.7720
14+ $8.5851 $120.1914
21+ $8.3160 $174.6360
29+ $8.0480 $233.3920
38+ $7.7801 $295.6438
50+ $6.9750 $348.7500
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Availability: 23,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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