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MRF300BN

Part No MRF300BN
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description RF MOSFET LDMOS 50V TO247 / RF Mosfet 50 V 27MHz ~ 250MHz 18.7dB 300W TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Series -
Package Tube
Product Status Active
Technology LDMOS
Frequency 27MHz ~ 250MHz
Gain 18.7dB
Voltage - Test 50 V
Current Rating (Amps) -
Noise Figure -
Power - Output 300W
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Base Product Number MRF300
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1353438-MRF300BN
Ultra Librarian 3D Model Ultra Librarian MRF300BN CAD Model

Description

The MRF300BN is a robust and high-performance power transistor designed by NXP Semiconductors, a leader in the field of advanced semiconductor solutions. This transistor is part of the MRF300 series, which is renowned for its efficiency and reliability in RF power amplification applications. The MRF300BN is particularly suitable for use in a wide range of industrial, commercial, and amateur radio frequency (RF) applications.

Key Features

  • High Efficiency: The MRF300BN offers exceptional efficiency, which is critical for reducing thermal loads and improving system longevity.
  • Wide Frequency Range: Designed to operate over a broad frequency range, this component is versatile and can be used in various RF applications.
  • High Power: With its ability to handle high power levels, the MRF300BN is suitable for applications requiring significant signal amplification.
  • Ruggedness: The transistor is built to withstand harsh conditions, making it reliable for demanding environments.
  • Thermal Performance: The excellent thermal performance ensures stable operation even under high power and temperature conditions.

Applications

The MRF300BN is ideal for a variety of applications, including but not limited to:

  • Industrial and commercial RF power amplifiers
  • Amateur radio amplifiers
  • Broadcast transmitters
  • RF heating and plasma generation
  • Medical applications such as MRI and RF ablation

Technical Specifications

Boasting a lateral N-channel broadband RF power MOSFET design, the MRF300BN features a drain-source voltage (Vds) of 50V, and a continuous drain current (Id) of 30.6A. Its high gain and wideband performance make it an excellent choice for designers looking to create efficient RF power solutions.

Quality and Reliability

NXP is committed to delivering high-quality products, and the MRF300BN is no exception. It is manufactured with stringent quality control processes, ensuring that each unit meets the highest standards of performance and reliability.

Conclusion

Whether you're developing RF amplifiers for commercial use or working on amateur radio projects, the MRF300BN from NXP offers the power, efficiency, and reliability you need to succeed. Its robust design and superior specifications make it a top choice for engineers and manufacturers worldwide.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $68.4071 $68.4071
2+ $63.9938 $127.9876
3+ $61.7871 $185.3613
4+ $57.3737 $229.4948
5+ $55.1671 $275.8355
6+ $52.9604 $317.7624
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Availability: 11 pieces
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