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PH1875L

Part No PH1875L
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 45.8A LFPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 45.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 33.4nC @ 5V
Max Input Capacitance 2600pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 62.5W (Tc)
Maximum Rds On at Id,Vgs 16.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 061441-PH1875L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PH1875L CAD Model

Description

The PH1875L is a cutting-edge semiconductor product from NXP, a global leader in secure connectivity solutions for embedded applications. Designed with precision and efficiency in mind, the PH1875L is an LDMOS transistor that is part of NXP's high-performance RF power transistor lineup. This product is specifically engineered to meet the demanding requirements of RF power amplification applications.

Key Features

  • High Efficiency: The PH1875L transistor is optimized for high efficiency, which is crucial for applications where power consumption is a critical factor. This efficiency also translates into better thermal performance and reliability.
  • Wide Frequency Range: This LDMOS transistor is capable of operating over a broad frequency spectrum, making it versatile for various applications including but not limited to broadcast, industrial, scientific, and medical (ISM) applications.
  • Robustness: NXP's PH1875L is designed to withstand harsh conditions, ensuring consistent performance and a long operational life, even in the most demanding environments.
  • High Power Output: With its ability to deliver a high output power, the PH1875L is suitable for applications that require significant power amplification without sacrificing signal integrity.

Applications

The versatility of the PH1875L allows it to be used in a wide range of applications. It is particularly well-suited for RF power amplifiers in broadcast transmitters, cellular base station amplifiers, plasma generators, laser drivers, and MRI systems. Its robust design also makes it an excellent choice for military and aerospace applications where reliability under extreme conditions is paramount.

Technical Specifications

The PH1875L boasts impressive technical specifications, including a high operating efficiency and a wideband capability. It is designed to operate at VHF, UHF, and up to GHz frequencies, which covers most of the RF spectrum used in modern communication and industrial systems. Its thermal and electrical stability ensure that it can handle high power levels while maintaining a high level of performance.

Conclusion

In summary, the PH1875L from NXP stands out as a high-performance, robust, and efficient LDMOS transistor. It is a testament to NXP's commitment to delivering quality and innovation in the field of RF power solutions. Whether for commercial or industrial use, the PH1875L is poised to deliver outstanding performance for a variety of high-power RF applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $54.1279 $108.2558
3+ $44.4132 $133.2396
5+ $43.0249 $215.1245
6+ $41.6378 $249.8268
8+ $40.2494 $321.9952
10+ $36.0857 $360.8570
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Availability: 2,800 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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