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PHB110NQ08LT,118

Part No PHB110NQ08LT,118
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 127.3nC @ 10V
Max Input Capacitance 6631pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1087770-PHB110NQ08LT,118
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHB110NQ08LT,118 CAD Model

Description

Introducing the PHB110NQ08LT,118 MOSFET by NXP Semiconductors

The PHB110NQ08LT,118 is a high-performance N-channel TrenchMOS™ standard level Field-Effect Transistor (FET) manufactured by NXP Semiconductors. This robust component is designed to deliver exceptional efficiency and power handling capabilities, making it an ideal choice for a wide range of applications, including switch-mode power supplies, DC-DC converters, motor drives, and other power management tasks.

Constructed with NXP's advanced TrenchMOS technology, the PHB110NQ08LT,118 boasts a low on-state resistance (R<sub>DS(on)) which translates into reduced conduction losses and improved overall efficiency. This feature, combined with its high current carrying capacity, allows for superior performance in high-power and high-efficiency applications.

Key Features of PHB110NQ08LT,118:

  • Low Threshold Voltage: The device has a low threshold voltage that ensures low voltage operation, making it suitable for logic-level gate drive circuits.
  • High-Speed Switching: With fast switching capabilities, this MOSFET can handle high-frequency operations, which is critical for efficient power conversion in modern electronic circuits.
  • Robust Thermal Performance: The PHB110NQ08LT,118 is encapsulated in a D2PAK package, known for its excellent thermal dissipation properties. This ensures the device operates reliably even under high temperature conditions.
  • High Avalanche Energy Rating: It is engineered to withstand high energy pulses in the avalanche and commutation modes, which is essential for applications that may experience unexpected voltage transients.

Applications:

The versatility of the PHB110NQ08LT,118 makes it suitable for a variety of applications, including:

  • Power supply units for computers and telecommunications
  • DC-to-AC inverters for solar energy systems
  • Automotive applications such as electric power steering and DC/DC converters
  • Industrial motor control systems

With its exceptional performance and reliability, the PHB110NQ08LT,118 from NXP Semiconductors is a top choice for engineers and designers looking to optimize their power management systems. Its cutting-edge technology ensures that it can meet the rigorous demands of modern electronic devices, providing a dependable and efficient solution for power conversion challenges.

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