EN
  • EN
  • DE

PSMN7R0-100XS,127

Part No PSMN7R0-100XS,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 55A TO220F / Trans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-220F Rail
Datasheet
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 121nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6686pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 57.7W (Tc)
Rds On (Maximum) @ Id, Vgs 6.8 mOhm @ 15A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220F
Package TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 792635-PSMN7R0-100XS,127
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Family Name PSMN7R0-100XS
Introduction Date July 21, 2011
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian PSMN7R0-100XS,127 CAD Model

Description

Overview of NXP's PSMN7R0-100XS,127 MOSFET

The PSMN7R0-100XS,127 is a high-performance N-channel MOSFET produced by NXP Semiconductors, a leader in the industry known for innovative and reliable products. This MOSFET is part of NXP's NextPowerS3 portfolio and comes encapsulated in a TO-220 package, which is widely recognized for its robustness and excellent thermal performance. It is designed to deliver outstanding efficiency and power density, making it an ideal choice for a broad range of applications.

Key Features

  • Low On-State Resistance: The PSMN7R0-100XS,127 features an ultra-low on-state resistance (R<sub>DS(on)) of just 7.0 mΩ at V<sub>GS = 10 V, which minimizes conduction losses and improves overall efficiency.
  • High Continuous Drain Current: It can handle a continuous drain current (I<sub>D) of up to 100 A, making it capable of supporting high power applications.
  • 100 V Drain-to-Source Voltage: With a maximum drain-to-source voltage (V<sub>DSS) of 100 V, the device is suited for systems that require high voltage operation.
  • Fast Switching Performance: The PSMN7R0-100XS,127 is designed for fast switching, which reduces switching losses and is beneficial in high-frequency applications.
  • Enhanced Thermal Performance: The TO-220 package enhances the thermal performance of the device, ensuring reliability even under high temperature operating conditions.

Applications

The versatility of the PSMN7R0-100XS,127 MOSFET makes it suitable for a variety of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor control systems
  • Automotive applications
  • Switching regulators
  • Inverters

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PSMN7R0-100XS,127 MOSFET is no exception, undergoing rigorous testing to ensure it meets the stringent requirements for industrial and automotive applications. With its superior performance and dependable construction, this MOSFET is an excellent choice for designers looking to enhance the efficiency and robustness of their power management systems.

You May Also Be Interested in

NEC
MOS FIELD EFFECT TRANSISTOR
Need more? Email Us
Infineon Technologies
Increased MOSFET dv/dt ruggedness
Lowest to $8.2310
Zetex Semiconductors
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Lowest to $0.5047
Hitachi, Ltd
Silicon P Channel MOS FET High Speed Switching
Lowest to $1.4264
Texas Instruments
N-CHANNEL NEXFET POWER MOSFET / Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R
Lowest to $2.8757
NEC
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Lowest to $0.3361
Analog Devices Inc.
Dual 5 A, 20 V Synchronous Step-Down
Need more? Email Us
NXP / Nexperia
N-channel TrenchMOS transistor
Need more? Email Us
Renesas Electronics America
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Lowest to $7.5410

Top Sellers

TDK InvenSense
IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Lowest to $10.4542
Texas Instruments
TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
Texas Instruments
DARLINGTON TRANSISTOR ARRAY | TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
Texas Instruments
IC BRIDGE DRIVER PAR 36HSSOP
Lowest to $19.3374
FTDI, Future Technology Devices International Ltd
IC USB FS SERIAL UART 28-SSOP
Lowest to $5.2271
JST Sales America Inc.
CONN HEADER SMD 6POS 1.25MM
Lowest to $0.4985
JST Sales America Inc.
CONN HEADER GH TOP 4POS 1.25MM
Lowest to $0.1782
Bosch Sensortec
SENSOR PRESSURE HUMIDITY TEMP
Lowest to $3.9204
Peregrine Semiconductor
RF ATTENUATOR 31.5DB 50OHM 20QFN
Lowest to $2.2891
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16QFN
Lowest to $5.9399
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.9399
Altera
IC CPLD 128MC 10NS 100TQFP
Lowest to $3.3015
Texas Instruments
IC CTRLR HOT SWAP 48V 10-MSOP
Lowest to $4.1579
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.9399
Bosch Sensortec
IMU ACCEL/GYRO I2C/SPI 14LGA / Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output
Lowest to $3.6828
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess