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30C02CH-TL-E

Part No 30C02CH-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 30V 0.7A 3CPH / Bipolar (BJT) Transistor NPN 30 V 700 mA 540MHz 700 mW Surface Mount 3-CPH
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 700 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 190mV @ 10mA, 200mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 50mA, 2V
Power - Max 700 mW
Frequency - Transition 540MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-96
Supplier Device Package 3-CPH
Base Product Number 30C02
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 850516-30C02CH-TL-E
Ultra Librarian 3D Model Ultra Librarian 30C02CH-TL-E CAD Model

Description

Product Overview: 30C02CH-TL-E by ON Semiconductor

The 30C02CH-TL-E is a high-performance N-Channel MOSFET developed by ON Semiconductor, a leader in energy-efficient innovations. This product is designed to meet the requirements of a wide range of electronic applications, particularly in power management solutions where efficiency and reliability are paramount.

Key Features and Benefits

  • Low On-Resistance: The device features a very low on-resistance (R<sub>DS(on)), which means it has minimal voltage drop while conducting and thus ensures efficient power usage and reduced heat generation.
  • High-Speed Switching: With its fast switching capabilities, the 30C02CH-TL-E is ideal for high-frequency applications, contributing to better performance and reduced switching losses.
  • Low Gate Charge: The low gate charge (Q<sub>G) of this MOSFET allows for efficient switching at high speeds, which is crucial for reducing power losses in applications such as DC-DC converters.
  • Robust Thermal Performance: The MOSFET is encapsulated in a small and flat lead halogen-free package, which not only saves space but also provides excellent thermal performance, ensuring reliability even under high temperature operating conditions.

Applications

The versatility of the 30C02CH-TL-E MOSFET makes it suitable for a variety of applications, which include:

  • Power Supply Circuits
  • DC-DC Converters
  • Motor Drives
  • Battery Management Systems
  • Load Switches
  • Power Management for Consumer Electronics

Product Specifications

The 30C02CH-TL-E MOSFET is characterized by its impressive specifications that ensure optimal performance in demanding environments:

  • Drain-Source Voltage (V<sub>DSS): 30V
  • Continuous Drain Current (I<sub>D): 6A
  • Power Dissipation (P<sub>D): 1.25W
  • Operating Temperature Range: -55°C to 150°C

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly solutions. The 30C02CH-TL-E is a RoHS-compliant product, ensuring that it is manufactured with the restriction of hazardous substances, making it suitable for eco-conscious applications and global markets.

In summary, the 30C02CH-TL-E N-Channel MOSFET from ON Semiconductor stands out for its efficiency, fast switching, and robust thermal management, making it an excellent choice for designers looking to optimize their power management systems.

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