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FJC1308QTF

Part No FJC1308QTF
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 3A SOT-89
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Features Bipolar (BJT) Transistor PNP 30 V 3 A - 500 mW Surface Mount SOT-89-3
Manufacturer ON Semiconductor
Package Reel - TR
Part Status Obsolete
Operating Temperature Range 150°C (TJ)
Mounting Surface Mount
Package TO-243AA
Case / Package SOT-89-3
Family Name FJC13
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Quantity per package 4000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 871991-FJC1308QTF
Ultra Librarian 3D Model Ultra Librarian FJC1308QTF CAD Model

Description

Introducing the FJC1308QTF Power Transistor by ON Semiconductor

The FJC1308QTF is a state-of-the-art power transistor designed by ON Semiconductor, a renowned leader in energy-efficient innovations. This high-performance NPN bipolar junction transistor (BJT) is specifically engineered to cater to a wide array of power amplification and switching applications where high efficiency is paramount.

Key Features

  • High Current Capacity: The FJC1308QTF is capable of handling high current loads, making it suitable for demanding applications.
  • Low Saturation Voltage: It offers a low collector-emitter saturation voltage, which translates to reduced power dissipation and improved overall efficiency.
  • Fast Switching Speed: With its quick switching capabilities, the FJC1308QTF is ideal for high-frequency operations.
  • High Reliability: The device is designed for longevity, ensuring reliable performance over an extended period.
  • Robust Thermal Performance: Its excellent thermal characteristics ensure stable operation even under high temperature conditions.

Applications

The versatile nature of the FJC1308QTF makes it an excellent choice for a variety of applications, including:

  • Power supply regulators
  • DC-DC converters
  • Motor controllers
  • Audio amplifiers
  • Switching circuits

Technical Specifications

The FJC1308QTF comes with an impressive set of technical specifications that make it a robust and reliable component for your power management needs:

  • Collector-Emitter Voltage (Vceo): 400V
  • Collector Current (Ic): 8A
  • Power Dissipation (Pd): 80W
  • DC Current Gain (hFE): 10 - 40 at 4A
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly solutions. The FJC1308QTF is manufactured with this commitment in mind, ensuring that it complies with RoHS regulations, minimizing the environmental impact by avoiding the use of hazardous substances.

Whether you are designing power supplies, amplifiers, or any other application requiring an efficient and reliable power transistor, the FJC1308QTF by ON Semiconductor offers the performance and quality that engineers and designers trust.

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