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NTHD5905T1

Part No NTHD5905T1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 8V 3A CHIPFET
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 3A
Maximum Rds On at Id,Vgs 90 mOhm @ 3A, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA
Max Gate Charge 9nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package ChipFET
Win Source Part Number 1083886-NTHD5905T1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTHD5905T1 CAD Model

Description

The NTHD5905T1 is a high-performance, dual P-Channel Power MOSFET brought to you by ON Semiconductor, a leading supplier in energy-efficient innovations. This Power MOSFET is designed to meet a wide range of applications, offering a compact, yet powerful solution for your circuit needs. With its dual P-Channel configuration, the NTHD5905T1 provides efficient power management in a single package, reducing the PCB space required and simplifying the design process.

The device features two MOSFETs with a common drain connection, making it ideal for applications such as load switch circuits and power management tasks. It boasts a low threshold voltage, ensuring that it can be driven by low-voltage control signals, which is particularly beneficial for battery-operated devices and portable applications.

The NTHD5905T1 is constructed with ON Semiconductor's advanced PowerTrench® process that delivers low on-resistance, reduced gate charge, and exceptional thermal performance. This translates to improved efficiency and reliability, even under demanding conditions. The low on-resistance minimizes conduction losses, while the reduced gate charge allows for faster switching speeds, making it suitable for high-frequency operations.

Additionally, the MOSFET comes in a compact ChipFET package, which is not only space-saving but also provides excellent power dissipation characteristics. This makes the NTHD5905T1 a great choice for space-constrained applications where thermal management is critical.

Key specifications of the NTHD5905T1 include a drain-source voltage (V<sub>DS) of -30V, a continuous drain current (I<sub>D) of -3.4A, and a power dissipation of 2.0W. Its low threshold voltage and fast switching capabilities enhance the performance of your designs, ensuring efficient operation and longevity.

Whether you are designing power supplies, motor controls, or any other application requiring a reliable P-Channel MOSFET, the NTHD5905T1 from ON Semiconductor offers a versatile and efficient solution that can help you achieve your design goals.

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2687 $57.7705
525+ $0.2205 $115.7625
815+ $0.2136 $174.0840
1,120+ $0.2067 $231.5040
1,450+ $0.1998 $289.7100
1,935+ $0.1792 $346.7520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,810 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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