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NTMFS4835NT1G

Part No NTMFS4835NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A SO-8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta), 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 52nC @ 11.5V
Max Input Capacitance 3100pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 890mW (Ta), 62.5W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN, 5 Leads
Win Source Part Number 025803-NTMFS4835NT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMFS4835NT1G CAD Model

Description

ON Semiconductor NTMFS4835NT1G N-Channel Power MOSFET

The NTMFS4835NT1G is a high-performance N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is a testament to ON Semiconductor's commitment to providing advanced power management solutions that cater to a wide range of applications including computing, automotive, consumer, and industrial markets.

Key Features

  • Low On-Resistance: The NTMFS4835NT1G boasts an exceptionally low on-resistance (RDS(on)), which translates to reduced conduction losses and improved efficiency in electronic circuits.
  • High Current Capacity: Engineered for high current applications, this MOSFET can handle continuous drain currents, making it suitable for high-power applications.
  • High Switching Speed: With fast switching capabilities, the NTMFS4835NT1G minimizes switching losses and is ideal for high-frequency power switching applications.
  • Robust Thermal Performance: The device is encapsulated in a compact, thermally enhanced package that supports efficient heat dissipation, ensuring reliable performance even under high temperature conditions.
  • Low Gate Charge: The low gate charge (QG) of the NTMFS4835NT1G reduces the power required to drive the MOSFET, resulting in lower overall power consumption.

Applications

The versatility of the NTMFS4835NT1G allows it to be used in a variety of applications, including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Switching regulators
  • Power supply circuits
  • Automotive applications

Product Specifications

The NTMFS4835NT1G is built with the following specifications:

  • Voltage Rating (VDS): 30V
  • Continuous Drain Current (ID): High Amps
  • Power Dissipation (PD): High Watts
  • Operating Temperature Range: -55°C to 150°C
  • Package: SO-8FL

ON Semiconductor's NTMFS4835NT1G is a robust and efficient solution for designers looking to optimize power management in their electronic designs. Its combination of low on-resistance, high current handling, and fast switching speed makes it a preferred choice for applications requiring high performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3234 $58.2120
435+ $0.2657 $115.5795
675+ $0.2576 $173.8800
930+ $0.2495 $232.0350
1,200+ $0.2414 $289.6800
1,605+ $0.2160 $346.6800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,400 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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