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PJP5NA80_T0_00001

Name: PJP5NA80_T0_00001
Brand: Panjit
SKU: 1085297
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	PJP5NA80_T0_00001
Manufacturer	Panjit
Catalog	Transistors - FETs, MOSFETs - RF
Description	800V N-CHANNEL MOSFET / N-Channel 800 V 5A (Ta) 146W (Tc) Through Hole TO-220AB
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Panjit International Inc.
Package	Tube
Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.7Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	660 pF @ 25 V
Power Dissipation (Max)	146W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	3757-PJP5NA80_T0_00001
Standard Package	50
Win Source Part Number	1085297-PJP5NA80_T0_00001
Ultra Librarian 3D Model	Ultra Librarian PJP5NA80_T0_00001 CAD Model

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Description

The Panjit 1085297-PJP5NA80_T0_00001 is an N-Channel MOSFET transistor with a drain to source voltage (Vdss) of 800 V and a current-continuous drain (Id) of 5A (Ta) @ 25°C.

Drain to Source Voltage (Vdss): 800 V
Current-Continuous Drain (Id): 5A (Ta) @ 25°C
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 146W (Tc)
Package/Case: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Vgs (Max): ±30V
Operating Temperature Range: -55°C ~ 150°C (TJ)
New Designs: Not for new designs

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