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Same model may have multiple batches, images only for reference.
HAT2131R Real Image
Same model may have multiple batches, images only for reference.

HAT2131R

Part No HAT2131R
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 8SO
Datasheet
HAT2131R Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 350V
Continuous Drain Current at 25°C 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Max Gate Charge 20nC @ 10V
Max Input Capacitance 460pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 3 Ohm @ 450mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 067793-HAT2131R
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HAT2131R CAD Model

Description

The Renesas Electronics America HAT2131R is an active electronic component.

  • Popularity: Medium
  • Supply and Demand: Limited
  • Technology: MOSFET
  • Polarity: N-Channel
  • Power Dissipation: 2.5W (Ta)
  • Mounting: SMD (SMT)
  • Packaging: Reel - TR
  • Win Source Part Number: 067793
  • Category: Discrete Semiconductor Products
  • Temperature Range: 150°C (TJ)
  • Drain-Source Breakdown Voltage: 350V

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9298 $60.4370
155+ $0.7635 $118.3425
235+ $0.7392 $173.7120
325+ $0.7149 $232.3425
420+ $0.6918 $290.5560
560+ $0.6202 $347.3120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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