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Same model may have multiple batches, images only for reference.
HAT2140H-EL-E Real Image
Same model may have multiple batches, images only for reference.

HAT2140H-EL-E

Part No HAT2140H-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 25A 5LFPAK
Datasheet
HAT2140H-EL-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Max Gate Charge 105nC @ 10V
Max Input Capacitance 6500pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 12.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 067794-HAT2140H-EL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HAT2140H-EL-E CAD Model

Description

The Renesas Electronics America HAT2140H-EL-E is a high-performance N-channel MOSFET designed for use in discrete semiconductor products.

  • Type: N-channel MOSFET
  • Maximum Power Dissipation: 30W
  • Continuous Drain Current: 25A @ 25°C
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 16 mOhm @ 12.5A, 10V
  • Package: LFPAK
  • Dimensions: SC-100, SOT-669
  • Supply and Demand: In Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $23.8819 $71.6457
6+ $19.5957 $117.5742
10+ $18.9836 $189.8360
13+ $18.3714 $238.8282
17+ $17.7581 $301.8877
22+ $15.9217 $350.2774
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Availability: 1,760 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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