The IPP114N12N3G is a discrete N-channel MOSFET from Rochester Electronics, designed for a wide range of power switching applications. As a discrete component, it provides engineers with flexibility in circuit design and implementation.

Applications

• Synchronous Rectification
• DC-DC Converters
• Power Management in Computing Systems
• Motor Control Applications
• Power Adapters

Features

• N-Channel MOSFET
• Low On-Resistance (RDS(on)) for enhanced efficiency
• High Avalanche Energy
• Logic Level Compatibility
• Robust body diode for efficient freewheeling
• Fast Switching Speed

Benefits

• Increased system efficiency due to low RDS(on), minimizing power losses and heat generation.
• Improved thermal performance, enabling operation in demanding environments.
• Simplified gate drive requirements due to logic level compatibility.
• Enhanced system reliability and ruggedness due to high avalanche energy capability.
• Optimized for high-frequency switching applications.
• Improved power density in applications with limited space.

Additional Details

The IPP114N12N3G features a low gate charge, which contributes to its fast switching speed and reduces gate drive power requirements. The device's avalanche capability ensures robustness against voltage transients. The MOSFET is designed to operate over a wide temperature range, making it suitable for various industrial and commercial applications. It is offered in a standard through-hole package which ensures ease of mounting onto PCBs. This MOSFET is also suited to legacy equipment or repair work.