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RTQ030P02TR

Part No RTQ030P02TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3A TSMT6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 9nC @ 4.5V
Max Input Capacitance 800pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 80 mOhm @ 3A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT6 (SC-95)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 099660-RTQ030P02TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RTQ030P02TR CAD Model

Description

The Rohm Semiconductor electronic component with Win Source Part Number 099660-RTQ030P02TR is a P-channel MOSFET that is not for new designs.

  • Type: P-channel MOSFET
  • Design Status: not for new designs
  • Description: The product specifications indicate that it is a high-performance component that can be used in demanding applications.
  • Power Dissipation: 1.25W
  • Continuous Drain Current: 3A @ 25°C
  • Operating Temperature: designed to operate @ a temperature range of 150°C (TJ)
  • Drain-Source Breakdown Voltage: 20V
  • Package: packaged in TSMT6 (SC-95)
  • Suitability: suitable for use in various electronic devices.
  • Supply and Demand: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,136 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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