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Same model may have multiple batches, images only for reference.
SCT2450KEC Real Image
Same model may have multiple batches, images only for reference.

SCT2450KEC

Part No SCT2450KEC
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 10A TO-247
Datasheet
SCT2450KEC Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology SiCFET (Silicon Carbide)
Drain-Source Breakdown Voltage 1200V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Gate-Source Threshold Voltage 4V @ 900μA
Max Gate Charge 27nC @ 18V
Max Input Capacitance 463pF @ 800V
Maximum Gate-Source Voltage +22V, -6V
Power Dissipation (Max) 85W (Tc)
Maximum Rds On at Id,Vgs 585 mOhm @ 3A, 18V
Temperature Range - Operating 175°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 1030763-SCT2450KEC
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SCT2450KEC CAD Model

Description

The SCT2450KEC is a product of Rohm Semiconductor.

  • Technology: SiCFET (Silicon Carbide)
  • Polarity: N-Channel
  • Category: Discrete semiconductor product
  • Popularity: Medium
  • Supply and Demand: Balanced
  • Case/Package: TO-247-3
  • Drain-Source Breakdown Voltage: 1200V
  • Continuous Drain Current: 10A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 900μA
  • Gate-Source Voltage (Max): +22V, -6V

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