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BD179

Part No BD179
Manufacturer STMicroelectronics
Catalog Transistors (BJT) - Single
Description Trans GP BJT NPN 80V 3A 30000mW 3-Pin(3+Tab) SOT-32 Tube
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer STMicroelectronics
Win Source Part Number 234102-BD179
Popularity Low
Supply and Demand Status Balance
Family Name BD179
Introduction Date September 30, 1997
ECCN EAR99
Country of Origin China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BD179 CAD Model

Description

The BD179, from STMicroelectronics, is a robust power transistor designed for a wide range of applications requiring medium power amplification and switching. This versatile NPN transistor is part of STMicroelectronics' well-regarded semiconductor product line, known for its reliability and performance in various electronic circuits.

Key Features

  • High Current Capability: The BD179 is capable of handling significant current, making it suitable for high-power applications.
  • Medium Voltage Operation: With its ability to operate at medium voltages, this transistor can be used in a variety of circuits without the need for additional voltage regulation components.
  • Low Saturation Voltage: The low saturation voltage of the BD179 minimizes power loss and improves efficiency, which is crucial for power-sensitive designs.
  • Complementary PNP Type: The BD179 has a complementary PNP type, allowing designers to use it in push-pull and other complementary configurations, providing flexibility in circuit design.
  • Robust Construction: Built to last, the BD179 is encapsulated in a TO-126 package, which offers a good balance between thermal performance and compactness.

Applications

The BD179 transistor is well-suited for a variety of applications, including:

  • Audio amplifiers and hi-fi systems
  • Driver stages in high-fidelity amplifiers and audio equipment
  • Power regulators and power management systems
  • Switching applications in consumer electronics
  • General purpose switching and amplification

Technical Specifications

Below are the key technical specifications of the BD179:

  • Collector-Emitter Voltage (Vceo): 80V
  • Collector Current (Ic): 1.5A
  • Power Dissipation (Pd): 12.5W
  • DC Current Gain (hFE): 40 to 160
  • Operating Junction Temperature Range: -65°C to 150°C

For detailed information on the BD179, including pin configurations, electrical characteristics, and thermal properties, please refer to the official datasheet provided by STMicroelectronics.

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