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STFI20N65M5

Part No STFI20N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 650V 18A I2PAKFP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1345pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package I2PAKFP (TO-281)
Dimension TO-262-3 Full Pack, I2Pak
Win Source Part Number 1003055-STFI20N65M5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STFI20N65M5 CAD Model

Description

STFI20N65M5 - Power MOSFET by STMicroelectronics

The STFI20N65M5 is a state-of-the-art MDmesh™ M5 series Power MOSFET presented by STMicroelectronics, a global semiconductor leader. This device is designed to meet the efficiency and reliability requirements of modern high-performance power conversion systems.

Key Features

  • High Voltage Capability: With a maximum V<sub>DS of 650V, the STFI20N65M5 can handle high voltage applications with ease, making it suitable for a variety of power supply and conversion systems.
  • Low On-Resistance: The R<sub>DS(on) is exceptionally low, which translates to reduced conduction losses and improved overall efficiency of the system in which it is incorporated.
  • Fast Switching: The fast-switching capability of this MOSFET minimizes switching losses and is ideal for high-frequency operations.
  • Enhanced Power Density: Its high current rating and compact TO-220FP package allow for improved power density in design.
  • Reduced Gate Charge: A lower Q<sub>g results in lower driving power requirements and simplifies the gate drive design.

Applications

The STFI20N65M5 is versatile and can be used in a wide range of applications, including:

  • Switched Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Performance Computing
  • Motor Drives
  • Welding Equipment
  • Solar Inverters
  • Electric Vehicle Charging Stations

Reliability and Performance

STMicroelectronics ensures that the STFI20N65M5 meets the highest quality and reliability standards. The device is built with robust package construction, offering improved avalanche capability and thermal resistance. Its performance is characterized by a wide operating junction temperature range, making it reliable in extreme conditions.

Environmental Impact

Committed to environmental responsibility, STMicroelectronics has designed the STFI20N65M5 to comply with the RoHS directive, which restricts the use of certain hazardous substances in electrical and electronic equipment.

With its combination of high efficiency, reliability, and environmental consideration, the STFI20N65M5 Power MOSFET is an excellent choice for designers looking to create sustainable and energy-efficient power systems.

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