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2SJ610(TE16L1,NQ)

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Part No	2SJ610(TE16L1,NQ)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 250V 2A PW-MOLD / P-Channel 250 V 2A (Ta) 20W (Ta) Surface Mount PW-MOLD
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Toshiba Semiconductor and Storage
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.55Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	381 pF @ 10 V
Power Dissipation (Max)	20W (Ta)
Temperature Range - Operating	150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	PW-MOLD
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	2SJ610
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,000
Win Source Part Number	1109759-2SJ610(TE16L1,NQ)
Ultra Librarian 3D Model	Ultra Librarian 2SJ610(TE16L1,NQ) CAD Model

Alternative Products

Description

The 2SJ610(TE16L1,NQ) is a P-Channel MOSFET transistor designed for use in applications such as power supplies, motor drivers, and DC-DC converters.

Channel Type: P-Channel
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 2.55Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 20W (Ta)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 381 pF @ 10 V
Operating Temperature: 150°C (TJ)

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