SSM6J501NU,LF

Part No SSM6J501NU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 10A UDFN6B
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 29.9nC @ 4.5V
Max Input Capacitance 2600pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 15.3 mOhm @ 4A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-UDFNB (2x2)
Dimension 6-WDFN Exposed Pad
Win Source Part Number 096477-SSM6J501NU,LF
Popularity Medium
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
SSM6J501NU,LF(T;  SSM6J501NU;   SSM6J501NU(LF,A); 

Description

The SSM6J501NU,LF is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. This MOSFET has a maximum drain-source voltage of 20V and a maximum continuous drain current of 10A. It has a low on-resistance and a fast switching speed. The SSM6J501NU,LF is designed for various applications such as power management, load switching, and battery protection. It has a gate-source threshold voltage of 1V and a maximum gate charge of 29.9nC at 4.5V. This MOSFET is an ideal choice for those who need a reliable and efficient P-channel MOSFET for their applications.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
225+ $0.2256 $50.7600
475+ $0.2111 $100.2725
740+ $0.2038 $150.8120
1,060+ $0.1893 $200.6580
1,375+ $0.1820 $250.2500
1,720+ $0.1747 $300.4840
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 167,000 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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