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TK100E10N1

Part No TK100E10N1
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 140nC @ 10V
Max Input Capacitance 8800pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 255W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 50A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 090397-TK100E10N1
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name TK100E10N1
ECCN EAR99
Country of Origin China
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian TK100E10N1 CAD Model

Description

The Toshiba Semiconductor and Storage TK100E10N1 is a MOSFET transistor from.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 100A @ 25°C
  • Polarity: N-Channel
  • Maximum Rds On: 3.4 mOhm @ 50A and 10V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 140nC @ 10V
  • Package: TO-220-3
  • Power Dissipation: 255W (Tc)
  • Supply and Demand Status: Balanced
  • Estimated EOL Date: 2026

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6975 $52.3125
155+ $0.6525 $101.1375
240+ $0.6300 $151.2000
345+ $0.5850 $201.8250
445+ $0.5625 $250.3125
560+ $0.5400 $302.4000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 70,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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