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Same model may have multiple batches, images only for reference.
TPC8208(TE12L,Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC8208(TE12L,Q,M)

Part No TPC8208(TE12L,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 5A SOP8
Datasheet
TPC8208(TE12L,Q,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Part Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 5A
Rds On (Maximum) @ Id, Vgs 50 mOhm @ 2.5A, 4V
Vgs(th) (Maximum) @ Id 1.2V @ 200μA
Gate Charge (Qg) (Maximum) @ Vgs 9.5nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 780pF @ 10V
Power - Max 450mW
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package 8-SOIC (0.173", 4.40mm Width)
Manufacturer Package 8-SOP (5.5x6.0)
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 757608-TPC8208(TE12L,Q,M)
Popularity Medium
Supply and Demand Status Balance
Family Name TPC8208
Introduction Date July 26, 2001
Country of Origin Malaysia
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian TPC8208(TE12L,Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage TPC8208(TE12L,Q,M) is an obsolete dual N-channel MOSFET with logic level gate feature.

  • Applications: DC-DC converters, power management, and motor control
  • Maximum Power: 450mW
  • Continuous Drain Current: 5A
  • Package: 8-SOIC
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Availability: Alternative parts are also available as cross-reference.

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