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SI1051X-T1-E3

Part No SI1051X-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 122mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.45 nC @ 5 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 560 pF @ 4 V
Power Dissipation (Max) 236mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SC-89 (SOT-563F)
Package / Case SOT-563, SOT-666
Base Product Number SI1051
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277494-SI1051X-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI1051X-T1-E3 CAD Model

Description

The SI1051X-T1-E3 is a P-channel MOSFET transistor that is used in discrete semiconductor products, specifically in FETs, MOSFETs - Single.

  • Series: TrenchFET®
  • Mounting Technology: Surface-Mount
  • Maximum Drain to Source Voltage: 8V
  • Continuous Drain Current @ 25°C: 1.2A
  • Maximum Rds On @ 1.2A and 4.5V: 122mOhm
  • Maximum Gate-Source Voltage: ±5V
  • Maximum Operating Temperature: -55°C to 150°C
  • Supplier: Vishay Siliconix
  • Status: Obsolete

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