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Same model may have multiple batches, images only for reference.
SI1070X-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1070X-T1-E3

Part No SI1070X-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 1.2A SOT563F
Datasheet
SI1070X-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.55V @ 250μA
Max Gate Charge 8.3nC @ 5V
Max Input Capacitance 385pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 236mW (Ta)
Maximum Rds On at Id,Vgs 99 mOhm @ 1.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Dimension SOT-563, SOT-666
Win Source Part Number 130228-SI1070X-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI1070X-T1-E3 CAD Model

Description

The Vishay SI1070X-T1-E3 is a high-quality MOSFET transistor with an N-channel polarity and a maximum power dissipation of 236mW.

  • Manufacturer: Vishay
  • Product Name: SI1070X-T1-E3
  • Type: MOSFET transistor
  • Polarity: N-channel
  • Maximum Power Dissipation: 236mW
  • Application: high-frequency applications
  • Temperature Range: -55°C to 150°C
  • Package: SC-89-6
  • Mounting Technology: surface-mount technology
  • Drive Voltage: 2.5V and 4.5V
  • Gate-Source Threshold Voltage: 1.55V @ 250μA

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