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Same model may have multiple batches, images only for reference.
SI4104DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4104DY-T1-E3

Part No SI4104DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 4.6A 8-SOIC
Datasheet
SI4104DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 446pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 105 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 211633-SI4104DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4104DY-T1-E3 CAD Model

Description

The Vishay SI4104DY-T1-E3 is a high-quality MOSFET that is designed to provide reliable performance in a wide range of applications.

  • Package: 8-SO
  • Packaging: reel - TR packaging
  • Mounting Type: SMD (SMT)
  • Polarity: N-Channel
  • Maximum Power Dissipation: 2.5W (Ta), 5W (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 4.6A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 13nC @ 10V
  • Maximum Input Capacitance: 446pF @ 50V
  • Popularity: Medium
  • Supply and Demand Status: limited
  • Other Part Numbers: 211633-SI4104DY-T1-E3

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Quantity Unit Price Ext. Price
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195+ $0.6036 $117.7020
300+ $0.5848 $175.4400
410+ $0.5660 $232.0600
530+ $0.5470 $289.9100
710+ $0.4904 $348.1840
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MOQ: 80 pcs
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