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SI4931DY-T1-E3

Part No SI4931DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 6.7A 8-SOIC
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 6.7A
Maximum Rds On at Id,Vgs 18 mOhm @ 8.9A, 4.5V
Gate-Source Threshold Voltage 1V @ 350μA
Max Gate Charge 52nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 028556-SI4931DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4931DY-T1-E3 CAD Model

Description

The SI4931DY-T1-E3 is a Dual P-Channel MOSFET designed for use in Discrete Semiconductor Products.

  • Gate: Logic Level Gate
  • Mounting Style: surface mount device (SMD)
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 6.7A
  • Gate-Source Threshold Voltage: 1V @ 350μA
  • Maximum Rds On at Id,Vgs: 18 mOhm @ 8.9A, 4.5V
  • Package Type: 8-SO
  • Popularity: medium
  • Supply and Demand Status: limited
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Category: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3591 $54.3640
80+ $1.2715 $101.7200
125+ $1.2276 $153.4500
180+ $1.1399 $205.1820
230+ $1.0961 $252.1030
290+ $1.0523 $305.1670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,488 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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