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Same model may have multiple batches, images only for reference.
SI6993DQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6993DQ-T1-GE3

Part No SI6993DQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 3.6A 8-TSSOP
Datasheet
SI6993DQ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.6A
Maximum Rds On at Id,Vgs 31 mOhm @ 4.7A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 1096126-SI6993DQ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI6993DQ-T1-GE3 CAD Model

Description

The Vishay SI6993DQ-T1-GE3 is a dual 2 P-channel MOSFET designed for power management applications.

  • Gate Type: Logic Level
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 3.6A
  • Maximum Power Dissipation: 830mW
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 20nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 31 mOhm @ 4.7A, 10V
  • Package: 8-TSSOP
  • Application: Industrial
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balance

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