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Same model may have multiple batches, images only for reference.
SI7440DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7440DP-T1-GE3

Part No SI7440DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A PPAK SO-8
Datasheet
SI7440DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 35nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 211670-SI7440DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7440DP-T1-GE3 CAD Model

Description

The SI7440DP-T1-GE3 is an N-channel MOSFET transistor manufactured by Vishay that is designed for use in various electronic circuits.

  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 12A
  • Maximum On-Resistance: 6.5 mOhm @ 21A and 10V
  • Package: PowerPAK SO-8
  • Maximum Power Dissipation: 1.9W @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9621 $62.5365
150+ $0.7889 $118.3350
230+ $0.7646 $175.8580
315+ $0.7404 $233.2260
405+ $0.7149 $289.5345
545+ $0.6410 $349.3450
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Availability: 2,500 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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