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Same model may have multiple batches, images only for reference.
SIE806DF-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIE806DF-T1-GE3

Part No SIE806DF-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 15 V
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 10-PolarPAK® (L)
Package / Case 10-PolarPAK® (L)
Base Product Number SIE806
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277519-SIE806DF-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIE806DF-T1-GE3 CAD Model

Description

The Vishay SIE806DF-T1-GE3 is an N-channel MOSFET transistor with a drain to source voltage rating of 30V and a continuous drain current rating of 60A @ 25°C.

  • Maximum On-Resistance: 1.7mOhm @ 25A and 10V gate-source voltage
  • Package: 10-PolarPAK (L)
  • Packaging: Tape and Reel
  • Pieces per Package: 3,000
  • Maximum Power Dissipation: 5.2W @ Ta and 125W @ Tc
  • Gate Charge: 250nC @ 10V gate-source voltage
  • Input Capacitance: 13,000pF @ 15V drain-source voltage
  • REACH: Unaffected
  • ECCN: EAR99

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