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Same model may have multiple batches, images only for reference.
C3M0040120J1 Real Image
Same model may have multiple batches, images only for reference.

C3M0040120J1

Part No C3M0040120J1
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description 1200V 40 M SIC MOSFET / N-Channel 1200 V 64A (Tc) 272W (Tc) Surface Mount TO-263-7
Datasheet
C3M0040120J1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Wolfspeed, Inc.
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 53.5mOhm @ 33.3A, 15V
Vgs(th) (Max) @ Id 3.6V @ 9.2mA
Gate Charge (Qg) (Max) @ Vgs 94 nC @ 15 V
Vgs (Max) +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 1000 V
Power Dissipation (Max) 272W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package TO-263-7
Case / Package TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -3312-C3M0040120J1,1697-C3M0040120J1
Standard Package 50
Win Source Part Number 1324330-C3M0040120J1
Ultra Librarian 3D Model Ultra Librarian C3M0040120J1 CAD Model

Description

The C3M0040120J1 is an N-channel SiCFET designed for high power applications.

  • Drain-to-Source Voltage: 1200 V
  • Continuous Drain Current: 64 A @ 25°C
  • Maximum Rds On: 53.5mOhm @ 33.3A and 15V
  • Gate Charge: 94 nC @ 15 V
  • Input Capacitance: 2900 pF @ 1000 V
  • Package: TO-263-7
  • Operating Temperatures: -40°C to 150°C

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