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2DB1697-13

Part No 2DB1697-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 12V 2A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Max Vce (sat) 180mV @ 50mA, 1A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 270 @ 200mA, 2V
Maximum Power Dissipation 900mW
Frequency - Transition 140MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 1003781-2DB1697-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2DB1697-13 CAD Model

Description

Introducing Product 2DB1697-13 by Diodes Incorporated

Diodes Incorporated presents the 2DB1697-13, a state-of-the-art PNP bipolar junction transistor (BJT) designed to deliver reliable and efficient performance for a wide array of electronic applications. This innovative component is an integral part of modern electronic circuits, offering a compact solution for amplification and switching needs.

Key Features

  • Low V<sub>CE(sat): The 2DB1697-13 boasts a low collector-emitter saturation voltage, ensuring high efficiency in operation and reducing power dissipation within circuits.
  • High Current Gain Bandwidth Product (f<sub>T): With its high f<sub>T, this transistor is well-suited for amplification purposes, especially in audio and signal processing applications.
  • Complementary NPN Type Available: For applications requiring push-pull configurations, Diodes Incorporated offers a complementary NPN transistor, allowing for seamless integration in various circuit designs.
  • RoHS Compliant: The 2DB1697-13 adheres to the Restriction of Hazardous Substances (RoHS) directive, making it an environmentally friendly choice for electronic manufacturers.

Applications

The versatility of the 2DB1697-13 allows it to be used in a diverse array of applications, including:

  • Power management systems
  • Signal amplification in audio devices
  • Switching circuits
  • Linear amplification stages
  • Driver stages in hi-fi amplifiers and television circuits

Package and Quality Assurance

The 2DB1697-13 is available in a SOT-23 package, a popular choice for surface-mounted devices (SMDs) due to its small footprint and suitability for high-volume production. Diodes Incorporated ensures that each transistor meets rigorous quality standards, providing reliable performance in even the most demanding situations.

Technical Specifications

Before incorporating the 2DB1697-13 into your designs, please review the full datasheet for detailed technical specifications. This will ensure that the device meets your requirements and operates within the specified limits of your application.

With the 2DB1697-13, Diodes Incorporated continues to demonstrate its commitment to delivering high-quality semiconductor solutions that push the boundaries of efficiency and miniaturization in the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
335+ $0.1741 $58.3235
810+ $0.1429 $115.7490
1,255+ $0.1384 $173.6920
1,725+ $0.1340 $231.1500
2,235+ $0.1295 $289.4325
2,990+ $0.1161 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,540 pieces
MOQ: 335 pcs
Order Increment : 1 pcs
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