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DMN3033LDM-7

Part No DMN3033LDM-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.9A SOT-26
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 755pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 33 mOhm @ 6.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-26
Dimension SOT-23-6
Win Source Part Number 014432-DMN3033LDM-7
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN3033LDM-7 CAD Model

Description

Overview of DMN3033LDM-7 MOSFET by Diodes Incorporated

The DMN3033LDM-7 is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This compact semiconductor device is ideal for a wide range of applications that require efficient power management and high-speed switching operations.

Key Features

  • Low On-Resistance: The DMN3033LDM-7 features a low on-resistance (RDS(on)), which enhances its efficiency by minimizing power losses during operation. This characteristic is particularly beneficial in applications where energy conservation is critical.
  • High Continuous Drain Current: With a high continuous drain current (ID) capability, this MOSFET can handle significant levels of current without degradation, making it suitable for power-intensive applications.
  • Low Threshold Voltage: The device operates at a low threshold voltage (VGS(th)), ensuring that it can be easily driven by low-voltage control signals, thus broadening its compatibility with various control circuits and logic levels.
  • Fast Switching Speed: The DMN3033LDM-7 is designed for rapid switching, which is essential for reducing switching losses and improving the performance of power conversion systems.
  • RoHS Compliant: This MOSFET is compliant with the Restriction of Hazardous Substances (RoHS) directive, which means it is free from certain hazardous materials, making it environmentally friendly and suitable for use in a vast array of markets and products.

Applications

The versatility of the DMN3033LDM-7 allows it to be used in various applications, including:

  • Power Management Systems
  • DC/DC Converters
  • Motor Drives
  • Battery Management
  • Load Switches
  • Switch Mode Power Supplies (SMPS)

Package and Reliability

Encased in a small 3-pin SOT-23 package, the DMN3033LDM-7 is not only space-efficient but also offers excellent thermal performance. Its compact size makes it an excellent choice for space-constrained applications without compromising on power handling and thermal management. Additionally, the device's robust construction ensures high reliability and a long operational lifespan, even in demanding conditions.

In summary, the DMN3033LDM-7 from Diodes Incorporated is a superior choice for designers looking for a MOSFET that delivers high efficiency, fast switching, and reliable performance in a compact package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4301 $51.6120
285+ $0.3530 $100.6050
440+ $0.3419 $150.4360
605+ $0.3309 $200.1945
785+ $0.3199 $251.1215
1,050+ $0.2868 $301.1400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,060 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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