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Same model may have multiple batches, images only for reference.
DMN6013LFGQ-7 Diodes Incorporated
Same model may have multiple batches, images only for reference.

DMN6013LFGQ-7

Part No DMN6013LFGQ-7
Manufacturer Diodes Incorporated
Catalog TRANSISTORS
Description MOSFET N-CH 60V 10.3A PWRDI3333
Datasheet
DMN6013LFGQ-7 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Category Discrete Semiconductor Products> Transistors FETs, MOSFETs Single FETs, MOSFETs
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2577 pF @ 30 V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package POWERDI3333-8
Win Source Part Number WS1310013-DMN6013LFGQ-7
Ultra Librarian 3D Model Ultra Librarian DMN6013LFGQ-7 CAD Model

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:

ā— Motor control ā— DC to DC converters ā— Reverse polarity protection

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7722 $57.9150
185+ $0.6336 $117.2160
285+ $0.6138 $174.9330
390+ $0.5941 $231.6990
505+ $0.5742 $289.9710
675+ $0.5148 $347.4900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,243 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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