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Same model may have multiple batches, images only for reference.
DMTH15H017LPSWQ-13Diodes Incorporated
Same model may have multiple batches, images only for reference.

DMTH15H017LPSWQ-13

Part No DMTH15H017LPSWQ-13
Manufacturer Diodes Incorporated
Catalog TRANSISTORS
Description MOSFET BVDSS: 101V~250V POWERDI5
Datasheet
DMTH15H017LPSWQ-13 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Category Discrete Semiconductor Products >Transistors FETs, MOSFETs Single FETs, MOSFETs
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 17.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 3369 pF @ 75 V
Power Dissipation (Max) 1.5W (Ta), 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package PowerDI5060-8 (Type UX)
Package / Case 8-PowerTDFN
Win Source Part Number WS1310128-DMTH15H017LPSWQ-13
Ultra Librarian 3D Model Ultra Librarian DMTH15H017LPSWQ-13 CAD Model

Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.

ā— Synchronous rectification ā—  Power switching ā—  Class D audio amplifiers

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $3.8564 $50.1332
32+ $3.1642 $101.2544
49+ $3.0653 $150.1997
68+ $2.9665 $201.7220
88+ $2.8676 $252.3488
117+ $2.5709 $300.7953
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Availability: 110 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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