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Same model may have multiple batches, images only for reference.
FDMS3660S Real Image
Same model may have multiple batches, images only for reference.

FDMS3660S

Part No FDMS3660S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 13A/30A 8-PQFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A, 30A
Maximum Rds On at Id,Vgs 8 mOhm @ 13A, 10V
Gate-Source Threshold Voltage 2.7V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1765pF @ 15V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Power56
Win Source Part Number 016066-FDMS3660S
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS3660S CAD Model

Description

The FDMS3660S is a dual N-channel asymmetrical FET with a logic level gate from Fairchild/ON Semiconductor.

  • Product Type: FET
  • Package: Power56
  • Mounting Type: SMD
  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 30V
  • Drain Current (25°C): 13A / 30A
  • Gate-Source Threshold Voltage: 2.7V @ 250μA
  • Maximum Gate Charge: 29nC @ 10V
  • Maximum Input Capacitance: 1765pF @ 15V
  • Maximum Rds On (Id, Vgs): 8 mOhm @ 13A, 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Quantity per Package: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1157 $61.3635
115+ $1.0441 $120.0715
175+ $1.0083 $176.4525
250+ $0.9367 $234.1750
325+ $0.8997 $292.4025
405+ $0.8639 $349.8795
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Availability: 182,726 pieces
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