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Same model may have multiple batches, images only for reference.
FQP7N10 Real Image
Same model may have multiple batches, images only for reference.

FQP7N10

Part No FQP7N10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 7.3A TO-220
Datasheet
FQP7N10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 7.5nC @ 10V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 350 mOhm @ 3.65A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1039874-FQP7N10
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQP7N10 CAD Model

Description

The Fairchild/ON Semiconductor FQP7N10 MOSFET is a N-channel polarity device that can handle a maximum power dissipation of 40W(Tc).

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 7.3A(Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±25V
  • Maximum Rds On @ Id, Vgs: 350mOhm @ 3.65A, 10V
  • Package: TO-220-3
  • Drive Voltage: 10V
  • Lifecycle Status: Obsolete(EOL)
  • Operating Temperature Range: -55°C to 175°C(TJ)
  • Popularity: Moderately popular

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4658 $51.2380
265+ $0.3822 $101.2830
410+ $0.3703 $151.8230
560+ $0.3584 $200.7040
725+ $0.3464 $251.1400
970+ $0.3106 $301.2820
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Availability: 22,300 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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