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FQT2P25

Part No FQT2P25
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 250V P-Channel MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1175509-FQT2P25
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQT2P25 CAD Model

Description

The FQT2P25 is a P-Channel MOSFET manufactured by Fairchild Semiconductor, now part of ON Semiconductor. It's designed for power management and load switching applications requiring efficient and reliable performance.

Applications:

  • Load Switching: Used for switching power to various loads in electronic systems.
  • Power Management: Employed in power management circuits for efficient power distribution.
  • DC-DC Converters: Utilized in voltage regulation circuits for various electronic devices.
  • Battery Management Systems (BMS): Found in BMS applications for controlling battery charging and discharging.
  • Solid-State Relays (SSR): Used in SSR applications for switching high-power loads.

Features:

  • P-Channel MOSFET: Facilitates easy implementation in high-side switching configurations.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses and improves efficiency.
  • Fast Switching Speed: Enables high-frequency operation with minimal switching losses.
  • High Drain-Source Voltage (250V): Suitable for medium to high voltage applications.
  • Avalanche Rated: Provides enhanced robustness against voltage transients.

Benefits:

  • High Efficiency: Low on-resistance results in reduced power dissipation and improved energy efficiency.
  • Simplified Circuit Design: Easy to drive with standard gate drive circuits.
  • Robust Performance: Avalanche rating ensures reliable operation under transient conditions.
  • Versatile Application: Suitable for a wide range of power management and switching applications.

Additional Details:

The FQT2P25 typically comes in a TO-220 package. Key specifications include a drain-source voltage (VDS) of -250V, a continuous drain current (ID) of -2.1A, and a low on-resistance (RDS(on)) typically around 3.5 ohms at VGS = -10V. The gate-source voltage (VGS) is typically rated at +/- 30V. The MOSFET is designed for applications where efficiency, reliability, and ease of use are crucial. Its P-channel configuration makes it particularly well-suited for high-side switching applications, where the load is switched on and off on the positive side of the power supply.

The avalanche energy rating indicates its ability to withstand transient voltage spikes without damage, improving the overall reliability of the circuit. Consult the manufacturer's datasheet for detailed specifications, application notes, and safe operating area (SOA) curves.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4043 $58.6235
350+ $0.3315 $116.0250
540+ $0.3211 $173.3940
745+ $0.3107 $231.4715
965+ $0.3003 $289.7895
1,290+ $0.2691 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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