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IPA60R165CP

Part No IPA60R165CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 21A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 660μA
Max Gate Charge 52nC @ 10V
Max Input Capacitance 2000pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34W (Tc)
Maximum Rds On at Id,Vgs 165 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 068942-IPA60R165CP
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IPA60R165CP
Introduction Date December 22, 2005
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian IPA60R165CP CAD Model

Description

The Infineon Technologies IPA60R165CP is an N-channel MOSFET with a maximum drain-source breakdown voltage of 600V and a continuous drain current of 21A (Tc). It has a maximum Rds On of 165 mOhm @ 12A and 10V and a gate-source threshold voltage of 3.5V @ 660μA. The MOSFET is packaged in a PG-TO-220-FP case and has a maximum power dissipation of 34W (Tc). The IPA60R165CP is commonly used in various applications that require high voltage switching, such as power supplies, motor drives, and lighting. This device is halogen-free compliant and has a high popularity and limited supply and demand status.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.1133 $61.3596
28+ $4.1956 $117.4768
43+ $4.0644 $174.7692
59+ $3.9334 $232.0706
76+ $3.8023 $288.9748
102+ $3.4089 $347.7078
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Availability: 27,416 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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