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Same model may have multiple batches, images only for reference.
IPP65R065C7XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP65R065C7XKSA1

Part No IPP65R065C7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V TO-220-3
Datasheet
IPP65R065C7XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 850μA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 3020pF @ 400V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 171W (Tc)
Maximum Rds On at Id,Vgs 65 mOhm @ 17.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1046012-IPP65R065C7XKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP65R065C7XKSA1 CAD Model

Description

The Infineon Technologies IPP65R065C7XKSA1 is a MOSFET transistor with a N-Channel polarity.

  • Manufacturer: Infineon Technologies
  • Product: IPP65R065C7XKSA1
  • Type: MOSFET Transistor
  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 33A (Tc) @ 25°C
  • Power Dissipation (Max): 171W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 850μA
  • Max Gate Charge: 64nC @ 10V
  • Max Input Capacitance: 3020pF @ 400V
  • Package: PG-TO-220-3
  • Suitable for: Discrete Semiconductor Products
  • Temperature Range - Operating: -55°C to 150°C (TJ)
  • Maximum Rds On @ Id,Vgs: 65 mOhm @ 17.1A, 10V
  • Supply and Demand Status: Balance

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51+ $5.9428 $303.0828
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