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Same model may have multiple batches, images only for reference.
IPW65R190C7 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPW65R190C7

Part No IPW65R190C7
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPW65R190 - 650V AND 700V COOLMO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 400 V
Power Dissipation (Max) 72W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Standard Package 1 pcs
HTSUS 0000.00.0000
Win Source Part Number 603798-IPW65R190C7
Ultra Librarian 3D Model Ultra Librarian IPW65R190C7 CAD Model

Description

The 603798-IPW65R190C7 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Part: 603798-IPW65R190C7
  • Type: N-Channel MOSFET transistor
  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • Vdss: 650V
  • Id: 13A @ 25°C
  • Rds On: 190mOhm @ 5.7A and 10V Vgs
  • Vgs(th): 4V @ 290μA Id
  • Power Dissipation: 72W (maximum)
  • Mounting: Through-hole
  • Package: TO-247-3
  • Qg: 23nC @ 10V Vgs
  • Ciss: 1150pF @ 400V Vds
  • Operating Temperature: -55°C to 150°C
  • Status: Active
  • Application: High-voltage switching

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